The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
Sep. 12, 2012
Ming Cai, San Diego, CA (US);
Dechao Guo, Fishkill, NY (US);
Pranita Kulkarni, Slingerlands, NY (US);
Chun-chen Yeh, Clifton Park, NY (US);
Ming Cai, San Diego, CA (US);
Dechao Guo, Fishkill, NY (US);
Pranita Kulkarni, Slingerlands, NY (US);
Chun-Chen Yeh, Clifton Park, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Multigate transistor devices and methods of their fabrication are disclosed. In accordance with one method, a fin and a gate structure that is disposed on a plurality of surfaces of the fin are formed. In addition, at least a portion of an extension of the fin is removed to form a recessed portion that is below the gate structure, is below a channel region of the fin, and includes at least one angled indentation. Further, a terminal extension is grown in the at least one angled indentation below the channel region and along a surface of the channel region such that the terminal extension provides a stress on the channel region to enhance charge carrier mobility in the channel region.