The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Oct. 28, 2010
Ming Cai, Hopewell Junction, NY (US);
Xi LI, Somers, NY (US);
Frank D. Tamweber, Jr., Poughkeepsie, NY (US);
Ming Cai, Hopewell Junction, NY (US);
Xi Li, Somers, NY (US);
Frank D. Tamweber, Jr., Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a semiconductor device includes forming a spacer layer over a plurality of transistor gate structures, the transistor gate structures being formed over both active and shallow trench isolation (STI) regions of a substrate. The spacer layer is subjected to a directional etch so as to form sidewall spacers adjacent the plurality of transistor gate structures, and a horizontal fill portion of the spacer layer remains in one more recesses present in the STI regions so as to substantially planarize the STI region prior to subsequent material deposition thereon.