Poughkeepsie, NY, United States of America

Frank D Tamweber, Jr

This inventor holds 2 USPTO granted patents. Top assignee: International Business Machines Corporation. Active years: 2008-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Frank D Tamweber, Jr. Retrieved from https://idiyas.com/inventor/frank-d-tamweber-jr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.4

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2008-2014

Loading Chart...
2 patents (USPTO):Explore Patents

Title: Frank D Tamweber, Jr: Innovator in Semiconductor Technology

Introduction

Frank D Tamweber, Jr. is a notable inventor based in Poughkeepsie, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work primarily focuses on methods that enhance the performance and reliability of semiconductor devices.

Latest Patents

Tamweber's latest patents include innovative techniques that address critical challenges in semiconductor manufacturing. One of his patents, titled "Shallow trench isolation recess repair using spacer formation process," describes a method for forming a semiconductor device. This method involves creating a spacer layer over transistor gate structures, which are situated over both active and shallow trench isolation (STI) regions of a substrate. The process includes a directional etch to form sidewall spacers, ensuring that the STI region is planarized before subsequent material deposition.

Another significant patent is "Subground rule STI fill for hot structure." This invention presents a hybrid orientation (HOT) semiconductor-on-insulator (SOI) structure with an isolation region, specifically a shallow trench isolation region (STI). The method for forming this isolation region is designed to be easily controlled, involving selective etching of insulating and semiconductor materials, followed by filling high aspect ratio gaps with CVD oxide and the remainder of the STI with HDP oxide.

Career Highlights

Frank D Tamweber, Jr. is currently employed at International Business Machines Corporation (IBM), where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and reliable.

Collaborations

Throughout his career, Tamweber has collaborated with talented individuals such as Ming Cai and Xi Li. These collaborations have contributed to the development of groundbreaking technologies in the semiconductor field.

Conclusion

Frank D Tamweber, Jr. is a distinguished inventor whose contributions to semiconductor technology have had a lasting impact. His innovative patents and work at IBM highlight his commitment to advancing the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…