The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2008
Filed:
Jan. 16, 2007
Byeong Y Kim, LaGrangeville, NY (US);
Munir D. Naeem, Poughkeepsie, NY (US);
Frank D. Tamweber, Poughkeepsie, NY (US);
Xiaomeng Chen, Poughkeepsie, NY (US);
Byeong Y Kim, LaGrangeville, NY (US);
Munir D. Naeem, Poughkeepsie, NY (US);
Frank D. Tamweber, Poughkeepsie, NY (US);
Xiaomeng Chen, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
This invention provides a hybrid orientation (HOT) semiconductor-on-insulator (SOI) structure having an isolation region, e.g. a shallow trench isolation region (STI), and a method for forming the STI structure that is easy to control. The method of forming the isolation region includes an etch of the insulating material, selective to the semiconductor material, followed by an etch of the semiconductor material, selective to the insulating material, and then filling any high aspect ratio gaps with a CVD oxide, and filling the remainder of the STI with an HDP oxide.