The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Sep. 04, 2013
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Ming Cai, San Diego, CA (US);
Samit Sengupta, San Diego, CA (US);
Chock Hing Gan, San Diego, CA (US);
PR Chidambaram, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/70 (2006.01); H01L 21/8238 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); G06F 17/50 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4916 (2013.01); H01L 21/28035 (2013.01); G06F 17/5068 (2013.01); H01L 22/14 (2013.01);
Abstract
A method includes forming a first poly-silicon gate of a first transistor, the first poly-silicon gate having a first length. The first transistor is located in a first core. The method also includes forming a second poly-silicon gate of a second transistor, the second poly-silicon gate having a second length that is shorter than the first length. The second transistor is located in a second core. The first core is located closer to a center of a semiconductor die than the second core.