The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 28, 2016
Filed:
Apr. 13, 2015
Globalfoundries Inc., Grand Cayman, KY;
Kangguo Cheng, Schenectady, NY (US);
Joseph Ervin, Wappingers Falls, NY (US);
Chengwen Pei, Danbury, CT (US);
Ravi M. Todi, San Diego, CA (US);
Geng Wang, Stormville, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A deep trench capacitor structure including an SOI substrate comprising an SOI layer, a rare earth oxide layer, and a bulk substrate, the rare earth oxide layer is located below the SOI layer and above the bulk substrate, and the rare earth oxide layer insulates the SOI layer from the bulk substrate, and a deep trench capacitor extending from a top surface of the SOI layer, through the rare earth oxide layer, down to a location within the bulk substrate, the rare earth oxide layer contacts the deep trench capacitor at an interface between the rare earth oxide layer and the bulk substrate forming an incline away from the deep trench capacitor.