The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Jun. 22, 2015
Globalfoundries Inc., Grand Cayman, KY;
Kangguo Cheng, Schenectady, NY (US);
Joseph Ervin, Wappingers Falls, NY (US);
Juntao Li, Guilderland, NY (US);
Chengwen Pei, Danbury, CT (US);
Ravi M. Todi, San Diego, CA (US);
Geng Wang, Stormville, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A dielectric mandrel structure is formed on a single crystalline semiconductor layer. An amorphous semiconductor material layer is deposited on the physically exposed surfaces of the single crystalline semiconductor layer and surfaces of the mandrel structure. Optionally, the amorphous semiconductor material layer can be implanted with at least one different semiconductor material. Solid phase epitaxy is performed on the amorphous semiconductor material layer employing the single crystalline semiconductor layer as a seed layer, thereby forming an epitaxial semiconductor material layer with uniform thickness. Remaining portions of the epitaxial semiconductor material layer are single crystalline semiconductor fins and thickness of these fins are sublithographic. After removal of the dielectric mandrel structure, the single crystalline semiconductor fins can be employed to form a semiconductor device.