The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Jun. 11, 2015
International Business Machines Corporation, Armonk, NY (US);
Herbert L. Ho, New Windsor, NY (US);
Naoyoshi Kusaba, Hopewell Junction, NY (US);
Karen A. Nummy, Newburgh, NY (US);
Carl J. Radens, LaGrangeville, NY (US);
Ravi M. Todi, San Diego, CA (US);
Geng Wang, Stormville, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A memory device is provided including a semiconductor on insulator (SOI) substrate including a first semiconductor layer atop a buried dielectric layer, wherein the buried dielectric layer is overlying a second semiconductor layer. A capacitor is present in a trench, wherein the trench extends from an upper surface of the first semiconductor layer through the buried dielectric layer and extends into the second semiconductor layer. A protective oxide is present in a void that lies adjacent the first semiconductor layer, and a pass transistor is present atop the semiconductor on insulator substrate in electrical communication with the capacitor.