Hopewell Junction, NY, United States of America

Naoyoshi Kusaba

USPTO Granted Patents = 7 

Average Co-Inventor Count = 4.9

ph-index = 2

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 2012-2016

where 'Filed Patents' based on already Granted Patents

7 patents (USPTO):

Title: **The Inventive Mind of Naoyoshi Kusaba**

Introduction

Naoyoshi Kusaba, an accomplished inventor based in Hopewell Junction, NY, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio that includes seven patents, Kusaba's innovations are at the forefront of enhancing memory devices and eDRAM technology.

Latest Patents

Among his latest patents, Kusaba has developed a sophisticated memory device that incorporates a structure and method for forming enhanced array device isolation for implanted plate eDRAM. This invention features a semiconductor on insulator (SOI) substrate, which includes a first semiconductor layer positioned atop a buried dielectric layer. A trench capacitor design also plays a crucial role in this advanced memory device, enhancing electrical communication and isolation capabilities.

Another notable patent focuses on array and moat isolation structures, which detail methods of manufacturing eDRAM with heterogeneous deep trench fill. The innovative process involves forming deep trenches for memory arrays and isolation regions, ensuring optimal performance through precise filling and lining techniques.

Career Highlights

Kusaba has worked for prominent companies including IBM and Globalfoundries Inc., where he honed his skills and contributed to groundbreaking technologies. His work at these organizations has been pivotal in driving advancements in semiconductor solutions and memory applications.

Collaborations

Throughout his career, Kusaba has collaborated with esteemed colleagues such as Herbert Lei Ho and Karen A. Nummy. Their collective expertise has undoubtedly propelled many of Kusaba’s innovative projects forward, further enhancing the impact of his inventions in the industry.

Conclusion

Naoyoshi Kusaba exemplifies the spirit of innovation through his extensive research and development in semiconductor technology. With a solid foundation in patent development and valuable industry experience, he continues to influence the future of memory devices, leaving a lasting legacy in the arena of technological advancements.

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