The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8642440 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 04, 2014

Filed:

Oct. 24, 2011
Applicants:

Chengwen Pei, Hopewell Junction, NY (US);

Roger Allen Booth, Jr., Hopewell Junction, NY (US);

Herbert Lei Ho, Hopewell Junction, NY (US);

Naoyoshi Kusaba, Hopewell Junction, NY (US);

Inventors:

Chengwen Pei, Hopewell Junction, NY (US);

Roger Allen Booth, Jr., Hopewell Junction, NY (US);

Herbert Lei Ho, Hopewell Junction, NY (US);

Naoyoshi Kusaba, Hopewell Junction, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

An improved semiconductor capacitor and method of fabrication is disclosed. Embodiments utilize a deep trench which is then processed by performing a pre-amorphous implant on the trench interior to transform the interior surface of the trench to amorphous silicon which eliminates the depletion region that can degrade capacitor performance.


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