Wappingers Falls, NY, United States of America

Roger Allen Booth, Jr

This inventor holds 69 USPTO granted patents, primarily in Semiconductor Technology (CPC class H01L). Top assignees: International Business Machines Corporation, Globalfoundries Inc.. Active years: 2007-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Roger Allen Booth, Jr. Retrieved from https://idiyas.com/inventor/roger-allen-booth-jr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 69

% Patents Active = 49.3

Average Co-Inventor Count = 4.2

ph-index = 14

Forward Citations = 661(Granted Patents)

Forward Citations (Not Self Cited) = 639(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Rochester, MN (US) (2007 - 2011)
Hopewell Junction, NY (US) (2012 - 2014)
Wappinger Falls, NY (US) (2014)
Wappingers Falls, NY (US) (2009 - 2016)
San Diego, CA (US) (2015 - 2016)
Irvine, CA (US) (2013 - 2020)

Company Filing History:

66 out of 166,351

International Business Machines Corporation

Years Active: 2007-2020

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Areas of Expertise:

Trench Capacitor

SOI Substrate

High-Density Memory Cells

Embedded DRAM

NMOS Transistors

Programmable Memory Device

Deep Isolation Trench

Self-Aligned Devices

FinFETs

Dynamic RAM Cell

Non-Volatile Memory

Capacitor Structure

69 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10818668 - Metal trench capacitor and improved isolation and methods of manufacture (2020-10-27),

2. 9899391 - Metal trench capacitor and improved isolation and methods of manufacture (2018-02-20),

3. 9583497 - Metal trench capacitor and improved isolation and methods of manufacture (2017-02-28),

4. 9478600 - Method of forming substrate contact for semiconductor on insulator (SOI) substrate (2016-10-25),

5. 9293520 - Method of forming substrate contact for semiconductor on insulator (SOI) substrate (2016-03-22),

6. 9287272 - Metal trench capacitor and improved isolation and methods of manufacture (2016-03-15),

7. 9281390 - Structure and method for forming programmable high-K/metal gate memory device (2016-03-08),

8. 9159578 - Self-aligned devices and methods of manufacture (2015-10-13),

9. 9059213 - Embedded DRAM for extremely thin semiconductor-on-insulator (2015-06-16),

10. 8969969 - High threshold voltage NMOS transistors for low power IC technology (2015-03-03),

11. 8936992 - Deep isolation trench structure and deep trench capacitor on a semiconductor-on-insulator substrate (2015-01-20),

12. 8927361 - High threshold voltage NMOS transistors for low power IC technology (2015-01-06),

13. 8921198 - Method and structure for forming a deep trench capacitor (2014-12-30),

14. 8916919 - Interdigitated vertical native capacitor (2014-12-23),

15. 8846470 - Metal trench capacitor and improved isolation and methods of manufacture (2014-09-30),

Title: Roger Allen Booth, Jr: Pioneering Innovations in Metal Trench Capacitors

Introduction:

Roger Allen Booth, Jr, a brilliant inventor based in Wappingers Falls, NY (US), has made significant contributions to the world of technology and innovation. With an impressive portfolio of 69 patents, Booth has consistently pushed the boundaries of what is possible in various industries.

Latest Patents:

Booth's latest patents focus on the development of metal trench capacitors and improved isolation techniques in manufacturing processes. These innovations involve the formation of deep trenches in substrates, filling them with sacrificial and poly materials, and employing high-k dielectric materials to enhance capacitor performance. The method also includes the integration of CMOS processes and the provision of passivation layers for enhanced durability.

Career Highlights:

Throughout his career, Booth has worked with prominent companies such as IBM and Globalfoundries Inc. His expertise and innovative spirit have been instrumental in developing cutting-edge technologies and driving advancements in the semiconductor industry. Booth's dedication to pushing the boundaries of innovation has earned him a reputation as a trailblazer in his field.

Collaborations:

Booth has collaborated with esteemed professionals in the industry, including Kangguo Cheng and Chengwen Pei. These collaborative efforts have led to the successful implementation of groundbreaking technologies and have paved the way for future innovations in the field of semiconductor manufacturing.

Conclusion:

In conclusion, Roger Allen Booth, Jr stands as a testament to the power of innovation and perseverance in the world of inventing. His groundbreaking work in metal trench capacitors and improved isolation techniques has not only revolutionized the semiconductor industry but has also inspired a new generation of inventors to push the boundaries of what is possible. Booth's legacy will undoubtedly continue to shape the future of technology and innovation for years to come.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]