The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Mar. 18, 2013
International Business Machines Corporation, Armonk, NY (US);
Roger A. Booth, Jr., Wappingers Falls, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Joseph Ervin, Hopewell Junction, NY (US);
Ali Khakifirooz, Slingerlands, NY (US);
Chengwen Pei, Danbury, CT (US);
Ravi M. Todi, San Diego, CA (US);
Geng Wang, Stormville, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A node dielectric and a conductive trench fill region filling a deep trench are recessed to a depth that is substantially coplanar with a top surface of a semiconductor-on-insulator (SOI) layer. A shallow trench isolation portion is formed on one side of an upper portion of the deep trench, while the other side of the upper portion of the deep trench provides an exposed surface of a semiconductor material of the conductive fill region. A selective epitaxy process is performed to deposit a raised source region and a raised strap region. The raised source region is formed directly on a planar source region within the SOI layer, and the raised strap region is formed directly on the conductive fill region. The raised strap region contacts the raised source region to provide an electrically conductive path between the planar source region and the conductive fill region.