The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Jan. 25, 2013
Globalfoundries Inc., Grand Cayman, KY;
Karen A. Nummy, Newburgh, NY (US);
Ravi M. Todi, Poughkeepsie, NY (US);
GlobalFoundries, Inc., Grand Cayman, KY;
Abstract
A method of forming a contact on a semiconductor device is disclosed. The method includes: forming a mask on the semiconductor device, the mask exposing at least one contact node disposed within a trench in a substrate of the semiconductor device; performing a first substrate contact etch on the semiconductor device, the first substrate contact etch recessing the exposed contact node within the trench; removing a set of node films disposed above the exposed contact node and on the sides of the trench; and forming a contact region within the trench above the exposed contact node, the contact region contacting the substrate.