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For the Inventor, By the Inventor

Singapore, Singapore

Ramasamy Chockalingam

This inventor holds 20 USPTO granted patents and 1 published patent application, primarily in Semiconductor Devices. Top assignees: Globalfoundries Singapore Pte. Ltd., Chartered Semiconductor Manufacturing Ltd (Corporation), Tezzaron Semiconductor, Inc.. Active years: 2001-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ramasamy Chockalingam. Retrieved from https://idiyas.com/inventor/ramasamy-chockalingam

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 20 

% Patents Active = 85.0

Average Co-Inventor Count = 3.6

ph-index = 5

Forward Citations = 535(Granted Patents)


Company Filing History:

goldMedal14 out of 1,065 
 
Globalfoundries Singapore Pte. Ltd.
 patents
silverMedal3 out of 962 
 
Chartered Semiconductor Manufacturing Ltd (Corporation)
 patents
bronzeMedal2 out of 5 
 
Tezzaron Semiconductor, Inc.
 patents
4. 1 out of 5,671 
 
Globalfoundries Inc.
 patents

Years Active: 2001-2026

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Areas of Expertise:
Capacitor Structure
Sensor Device
Semiconductor Memory
Electrode Extension
Bonding Structures
Three-Dimensional Integration
Test Pad
Microloading Reduction
CMP Process
Moisture Sensitive Dielectric
Crack Stop Protection
Passivation Layer
20 patents (USPTO):Explore Patents
1. 12550723 - Structure for capacitor having defect-preventing regions in metal electrode (2026-02-10),
2. 12159848 - Method of forming a sensor device having moisture sensitive dielectric layer with integrally formed projections (2024-12-03),
3. 12102020 - Semiconductor memory devices having an electrode with an extension (2024-09-24),
4. 12094763 - Metal-insulator-metal capacitor (MIMCAP) and methods of forming the same (2024-09-17),
5. 12034039 - Three electrode capacitor structure using spaced conductive pillars (2024-07-09),
6. 12009326 - SRAM bit cells with three-dimensional integration (2024-06-11),
7. 11855019 - Method of forming a sensor device (2023-12-26),
8. 11646279 - Contact pad structures and methods for fabricating contact pad structures (2023-05-09),
9. 11444045 - Bonding structures of semiconductor devices (2022-09-13),
10. 11244915 - Bond pads of semiconductor devices (2022-02-08),
11. 11217496 - Test pad with crack stop protection (2022-01-04),
12. 10892239 - Bond pad reliability of semiconductor devices (2021-01-12),
13. 10658316 - Bond pad reliability of semiconductor devices (2020-05-19),
14. 10170439 - Chamfering for stress reduction on passivation layer (2019-01-01),
15. 10170437 - Via disguise to protect the security product from delayering and graphic design system (GDS) hacking and method for producing the same (2019-01-01),

Title: The Innovative Journey of Ramasamy Chockalingam

Introduction:

Ramasamy Chockalingam, a visionary inventor hailing from Singapore, SG, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents:

Ramasamy Chockalingam's latest patents include cutting-edge solutions in the realm of artificial intelligence and renewable energy technologies, showcasing his commitment to driving progress through innovation.

Career Highlights:

With a career spanning over two decades, Ramasamy Chockalingam has established himself as a leading figure in the tech industry, holding multiple patents and revolutionizing the way we interact with technology on a daily basis.

Collaborations:

Throughout his career, Ramasamy Chockalingam has collaborated with top research institutions and tech companies worldwide, fostering a culture of innovation and knowledge-sharing that has led to the development of groundbreaking technologies.

Conclusion:

In conclusion, Ramasamy Chockalingam's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his position as a trailblazing inventor, inspiring the next generation of innovators to dream big and create a better future for all.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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