The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Feb. 11, 2021
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Ee Jan Khor, Singapore, SG;

Juan Boon Tan, Singapore, SG;

Ramasamy Chockalingam, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); G01N 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); G01N 27/225 (2013.01); H01L 24/03 (2013.01); H01L 24/06 (2013.01); H01L 2224/02206 (2013.01); H01L 2224/0382 (2013.01);
Abstract

The disclosed subject matter relates generally to methods of forming a semiconductor device, such as a moisture sensor. A plurality of electrodes and a bond pad are formed in a dielectric region. A passivation layer is formed on each electrode in the plurality of electrodes and the bond pad. A barrier layer is formed on the passivation layer. A plurality of trenches are formed to extend through the barrier layer and into the dielectric region. Formation of the trenches simultaneously exposes an upper surface of the bond pad. A moisture sensitive dielectric layer is formed on the barrier layer. Formation of the moisture sensitive dielectric layer also fills the trenches to form a plurality of projections, each projection being formed between two electrodes in the plurality of electrodes.


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