The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2024

Filed:

Sep. 07, 2021
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Kwang Sing Yew, Singapore, SG;

Ramasamy Chockalingam, Singapore, SG;

Juan Boon Tan, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/08 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76811 (2013.01); H01L 21/76832 (2013.01); H01L 21/76843 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 27/0805 (2013.01); H01L 28/40 (2013.01);
Abstract

A device may include a first conductive element and an interlevel dielectric arranged over the first conductive element. The device may further include a dual damascene opening including a first end, a second end, and sidewalls extending between the first and second ends, the sidewalls extending through the interlevel dielectric. A metal-insulator-metal (MIM) stack may line the dual damascene opening. The MIM stack may include a first conductive liner lining the sidewalls and the second end of the dual damascene opening, an insulator layer lining the first conductive liner, and a second conductive liner lining the insulator layer. A first metal interconnect may be disposed in and filling the dual damascene opening lined with the MIM stack.


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