The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 01, 2019

Filed:

Sep. 29, 2017
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Ee Jan Khor, Singapore, SG;

Juan Boon Tan, Singapore, SG;

Wanbing Yi, Singapore, SG;

Ramasamy Chockalingam, Singapore, SG;

Qian Chen, Singapore, SG;

Suleni Tunggal Mulia, Singapore, SG;

Yongmei Hu, Singapore, SG;

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/00 (2006.01); H01L 23/482 (2006.01); H01L 23/31 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 23/3171 (2013.01); H01L 23/4824 (2013.01); H01L 23/5226 (2013.01); H01L 24/03 (2013.01); H01L 24/13 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/05012 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/13007 (2013.01);
Abstract

Devices are formed to have inner layers that have electronic devices, and an outer passivation layer. A patterned conductor is formed on a first surface of the inner layers, and through conductors (that extend through interior insulator layers) are positioned to electrically connect the patterned conductor to the electronic devices. The patterned conductor includes a pattern of connected linear sections that are parallel to the first surface of the inner layers. The linear sections of the patterned conductor meet at conductor corners, and at least one of the conductor corners of the patterned conductor includes a chamfer side that terminates at the linear sections. Further, the chamfer side is not perfectly diagonal, but instead forms unequal angles with the linear sections that intersect to form the corner.


Find Patent Forward Citations

Khor, Ee. (2019). Chamfering for stress reduction on passivation layer (U.S. Patent No. 10170439). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10170439

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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