The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

Aug. 01, 2022
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Eejan Khor, Singapore, SG;

Ramasamy Chockalingam, Singapore, SG;

Juan Boon Tan, Singapore, SG;

Pannirselvam Somasuntharam, Singapore, SG;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H01L 23/5223 (2013.01); H10D 1/692 (2025.01);
Abstract

A structure for a capacitor is provided. The structure includes a first metal electrode, such as a copper electrode, having at least one dielectric region, such as a dielectric, therein. A first dielectric layer is on the first metal electrode, and a second metal electrode is on the first dielectric layer. At least one via is on the second metal electrode. Each via is over the at least one dielectric region in the first metal electrode.


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Khor, Eejan. (2026). Structure for capacitor having defect-preventing regions in metal electrode (U.S. Patent No. 12550723). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12550723

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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