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For the Inventor, By the Inventor

Sunnyvale, CA, United States of America

Prasad Chaparala

USPTO Granted Patents = 20 

Average Co-Inventor Count = 3.2

ph-index = 8

Forward Citations = 331(Granted Patents)


Company Filing History:

goldMedal20 out of 4,791 
 
National Semiconductor Corporation
 patents

Years Active: 2003-2014

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20 patents (USPTO):Explore Patents
1. 8735980 - Configuration and fabrication of semiconductor structure using empty and filled wells (2014-05-27),
2. 8673720 - Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profile (2014-03-18),
3. 8304835 - Configuration and fabrication of semiconductor structure using empty and filled wells (2012-11-06),
4. 8253208 - Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profile (2012-08-28),
5. 8129262 - Fabrication of field-effect transistor with vertical body-material dopant profile tailored to alleviate punchthrough and reduce current leakage (2012-03-06),
6. 7879669 - Fabrication of field-effect transistor with reduced junction capacitance and threshold voltage of magnitude that decreases with increasing channel length (2011-02-01),
7. 7785971 - Fabrication of complementary field-effect transistors with vertical body-material dopant profiles tailored to alleviate punchthrough and reduce current leakage (2010-08-31),
8. 7718448 - Method of monitoring process misalignment to reduce asymmetric device operation and improve the electrical and hot carrier performance of LDMOS transistor arrays (2010-05-18),
9. 7701005 - Semiconductor structure in which like-polarity insulated-gate field-effect transistors have multiple vertical body dopant concentration maxima and different halo pocket characteristics (2010-04-20),
10. 7700980 - Structure and fabrication of field-effect transistor for alleviating short-channel effects (2010-04-20),
11. 7645657 - MOS transistor and method of forming the MOS transistor with a SiON etch stop layer that protects the transistor from PID and hot carrier degradation (2010-01-12),
12. 7595244 - Fabrication of like-polarity insulated-gate field-effect transistors having multiple vertical body dopant concentration maxima and different halo pocket characteristics (2009-09-29),
13. 7390682 - Method for testing metal-insulator-metal capacitor structures under high temperature at wafer level (2008-06-24),
14. 7170090 - Method and structure for testing metal-insulator-metal capacitor structures under high temperature at wafer level (2007-01-30),
15. 7145191 - P-channel field-effect transistor with reduced junction capacitance (2006-12-05),

Title: Prasad Chaparala: Innovator in Semiconductor Technology

Introduction: Prasad Chaparala, based in Sunnyvale, CA, is an accomplished inventor with a remarkable portfolio of 20 patents. His work has significantly contributed to the field of semiconductor technology, introducing innovative solutions that enhance device performance and reliability.

Latest Patents: Among his most recent patents are two notable inventions that demonstrate his expertise in semiconductor structures. The first patent, titled "Configuration and fabrication of semiconductor structure using empty and filled wells," describes a novel semiconductor structure designed to improve the performance of insulated-gate field-effect transistors (IGFETs). By utilizing both empty and filled well regions, this invention allows for a wide array of high-performance IGFETs suitable for various analog and digital applications.

The second patent, "Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profile," outlines a unique method for fabricating insulated-gate field-effect transistors. This innovation focuses on managing the nitrogen levels in the gate dielectric layer to prevent boron from penetrating into the channel zone, thus enhancing device integrity and performance.

Career Highlights: Prasad Chaparala has built a solid career at National Semiconductor Corporation, where he has been able to apply his expertise in semiconductor fabrication. His contributions have been pivotal in advancing the corporation's technological capabilities and ensuring that their products dominate the market.

Collaborations: Throughout his career, Prasad has collaborated with notable colleagues, including Constantin Bulucea and Fu-Cheng Wang. These partnerships have led to groundbreaking advancements in semiconductor technology, showcasing the importance of teamwork in the field of innovation.

Conclusion: Prasad Chaparala's inventive work and significant contributions to semiconductor technology have established him as a key figure in the industry. With an impressive collection of patents and a track record of successful collaborations, he continues to push the boundaries of what is possible in electronic engineering.

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