The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2009
Filed:
Oct. 16, 2007
Constantin Bulucea, Milpitas, CA (US);
Fu-cheng Wang, San Jose, CA (US);
Prasad Chaparala, Sunnyvale, CA (US);
Constantin Bulucea, Milpitas, CA (US);
Fu-Cheng Wang, San Jose, CA (US);
Prasad Chaparala, Sunnyvale, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
Fabrication of two differently configured like-polarity insulated-gate field-effect transistors (orandor) entails introducing multiple body-material semiconductor dopants of the same conductivity type into a semiconductor body. Gate electrodes (or) are defined such that each body-material dopant reaches a maximum concentration below the channel surface depletion regions, below all gate-electrode material overlying the channel zones (or), and at a different depth than each other body-material dopant. The transistors are provided with source/drain zones (or) of opposite conductivity type to, and with halo pocket portions of the same conductivity type as, the body-material dopants. One pocket portion (or) extends along both source/drain zones of one of the transistors. Another pocket portion (or) extends largely along only one of the source/drain zones of the other transistor so that it is asymmetrical.