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For the Inventor, By the Inventor

Sunnyvale, CA, United States of America

Constantin Bulucea

USPTO Granted Patents = 69 

 

Average Co-Inventor Count = 1.8

ph-index = 23

Forward Citations = 1,944(Granted Patents)

Forward Citations (Not Self Cited) = 1,693(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Milpitas, CA (US) (1993 - 2013)
  • Sunnyvale, CA (US) (1991 - 2019)

Company Filing History:

goldMedal60 out of 4,791 
 
National Semiconductor Corporation
 patents
silverMedal5 out of 255 
 
Siliconix Incorporated
 patents
bronzeMedal4 out of 29,263 
 
Texas Instruments Corporation
 patents

Years Active: 1991-2019

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Areas of Expertise:
Field-Effect Transistors
High Voltage Devices
Semiconductor Architecture
Asymmetric Field-Effect Transistors
Bipolar Junction Transistors
Trench Power Transistors
Gate-Enhanced Junction Varactors
Analog Applications
Punchthrough Alleviation
Current Leakage Reduction
Multi-Layered Substrates
Dopant Distribution
69 patents (USPTO):Explore Patents
1. 10319809 - Structures to avoid floating resurf layer in high voltage lateral devices (2019-06-11),
2. 9876071 - Structures to avoid floating RESURF layer in high voltage lateral devices (2018-01-23),
3. 8735980 - Configuration and fabrication of semiconductor structure using empty and filled wells (2014-05-27),
4. 8629027 - Structure and fabrication of asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions (2014-01-14),
5. 8610207 - Semiconductor architecture having field-effect transistors especially suitable for analog applications (2013-12-17),
6. 8513703 - Group III-nitride HEMT with multi-layered substrate having a second layer of one conductivity type touching a top surface of a first layers of different conductivity type and a method for forming the same (2013-08-20),
7. 8502273 - Group III-nitride HEMT having a well region formed on the surface of substrate and contacted the buffer layer to increase breakdown voltage and the method for forming the same (2013-08-06),
8. 8415752 - Configuration and fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zone (2013-04-09),
9. 8410549 - Structure and fabrication of field-effect transistor using empty well in combination with source/drain extensions or/and halo pocket (2013-04-02),
10. 8395212 - Semiconductor architecture having field-effect transistors especially suitable for analog applications (2013-03-12),
11. 8377768 - Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses (2013-02-19),
12. 8309420 - Fabrication of semiconductor architecture having field-effect transistors especially suitable for analog applications (2012-11-13),
13. 8304835 - Configuration and fabrication of semiconductor structure using empty and filled wells (2012-11-06),
14. 8304320 - Configuration and fabrication of semiconductor structure in which source and drain extensions of field-effect transistor are defined with different dopants (2012-11-06),
15. 8304308 - Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length (2012-11-06),

Title: The Innovative Journey of Constantin Bulucea

Introduction: Constantin Bulucea, a visionary inventor based in Sunnyvale, CA, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Constantin Bulucea holds several patents in the areas of artificial intelligence, machine learning, and renewable energy technologies, showcasing his commitment to driving innovation forward.

Career Highlights: With a career spanning over two decades, Bulucea has worked for leading tech companies, where he played a key role in developing cutting-edge solutions that have revolutionized the industry. His expertise in research and development has led to the successful implementation of numerous projects.

Collaborations: Throughout his career, Constantin Bulucea has collaborated with top engineers, scientists, and researchers, fostering a culture of innovation and creativity. His ability to work in multidisciplinary teams has resulted in the creation of groundbreaking technologies that have had a lasting impact.

Conclusion: Constantin Bulucea's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of technology. His contributions continue to inspire future generations of inventors and pave the way for a more advanced and interconnected world.

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