Configuration and fabrication of semiconductor structure having bipolar junction transistor in which non-monocrystalline semiconductor spacing portion controls base-link length

Abstract

A semiconductor structure contains a bipolar transistor () and a spacing structure (-or-). The transistor has an emitter (), a base (), and a collector (). The base is formed with an intrinsic base portion (I), a base link portion (L), and a base contact portion (C). The intrinsic base portion is situated below the emitter and above material of the collector. The base link portion extends between the intrinsic base portion and the base contact portions. The spacing structure includes an isolating dielectric layer (-or-) and a spacing component. The dielectric layer extends along the upper semiconductor surface. The spacing component includes a lateral spacing portion (-or-) of largely non-monocrystalline semiconductor material, preferably polycrystalline semiconductor material, situated on the dielectric layer above the base link portion. Opposite first and second upper edges of the lateral spacing portion (-and-) laterally conform to opposite first and second lower edges (-and-) of the base link portion so as to determine, and thereby control, its length.