The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 12, 2013
Filed:
Jul. 06, 2011
Constantin Bulucea, Milpitas, CA (US);
Constantin Bulucea, Milpitas, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
An insulated-gate field-effect transistor (V,V,V,V,W,U,V,W,, or) has a hypoabrupt vertical dopant profile below one (or) of its source/drain zones for reducing the parasitic capacitance along the pn junction between that source/drain zone and adjoining body material (or). In particular, the concentration of semiconductor dopant which defines the conductivity type of the body material increases by at least a factor of 10 in moving from that source/drain zone down to an underlying body-material location no more than 10 times deeper below the upper semiconductor surface than that source/drain zone. The body material preferably includes a more heavily doped pocket portion (or) situated along the other source/drain zone (or). The combination of the hypoabrupt vertical dopant profile below the first-mentioned source/drain zone, normally serving as the drain, and the pocket portion along the second-mentioned source/drain zone, normally serving as the source, enables the resultant asymmetric transistor to be especially suitable for high-speed analog applications.