The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2013
Filed:
Nov. 16, 2011
Constantin Bulucea, Milpitas, CA (US);
Constantin Bulucea, Milpitas, CA (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An insulated-gate field-effect transistor (U) utilizes an empty-well region for achieving high performance. The concentration of the body dopant reaches a maximum at a subsurface location no more than 10 times deeper below the upper semiconductor surface than the depth of one of a pair of source/drain zones (and), decreases by at least a factor of 10 in moving from the subsurface location along a selected vertical line (U) through that source/drain zone to the upper semiconductor surface, and has a logarithm that decreases substantially monotonically and substantially inflectionlessly in moving from the subsurface location along the vertical line to that source/drain zone. Each source/drain zone has a main portion (M orM) and a more lightly doped lateral extension (E orE). Alternatively or additionally, a more heavily doped pocket portion () of the body material extends along one of the source/drain zones.