The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Mar. 27, 2009
Prasad Chaparala, Sunnyvale, CA (US);
D. Courtney Parker, Topsham, ME (US);
Prasad Chaparala, Sunnyvale, CA (US);
D. Courtney Parker, Topsham, ME (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
An insulated-gate field-effect transistor (110, 114, or 122) is fabricated so that its gate dielectric layer (or) contains nitrogen having a vertical concentration profile specially tailored to prevent boron in the overlying gate electrode (or) from significantly penetrating through the gate dielectric layer into the underlying channel zone (or) while simultaneously avoiding the movement of nitrogen from the gate dielectric layer into the underlying semiconductor body. Damage which could otherwise result from undesired boron in the channel zone and from undesired nitrogen in the semiconductor body is substantially avoided.