Company Filing History:

8 out of 4,791

National Semiconductor Corporation

patents

1 out of 29,256

Texas Instruments Corporation

patents

Years Active: 2011-2014

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9 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8673720 - Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profile (2014-03-18),

2. 8629027 - Structure and fabrication of asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions (2014-01-14),

3. 8410549 - Structure and fabrication of field-effect transistor using empty well in combination with source/drain extensions or/and halo pocket (2013-04-02),

4. 8377768 - Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses (2013-02-19),

5. 8304835 - Configuration and fabrication of semiconductor structure using empty and filled wells (2012-11-06),

6. 8253208 - Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profile (2012-08-28),

7. 8101479 - Fabrication of asymmetric field-effect transistors using L-shaped spacers (2012-01-24),

8. 8084827 - Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses (2011-12-27),

9. 7968921 - Asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions (2011-06-28),

Title: D Courtney Parker: Innovator in Field-Effect Transistor Technology

Introduction

D Courtney Parker is a notable inventor based in Topsham, ME (US), recognized for his contributions to the field of semiconductor technology. With a total of nine patents to his name, Parker has made significant advancements in the design and fabrication of field-effect transistors.

Latest Patents

Among his latest patents is the "Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profile." This invention focuses on creating an insulated-gate field-effect transistor that features a gate dielectric layer containing nitrogen. The tailored vertical concentration profile is designed to prevent boron from penetrating into the underlying channel zone, thereby avoiding potential damage. Another significant patent is the "Structure and fabrication of asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions." This invention describes an asymmetric insulated-gate field-effect transistor with a unique configuration that enhances the stability of the threshold voltage over time.

Career Highlights

D Courtney Parker has worked with prominent companies in the semiconductor industry, including National Semiconductor Corporation and Texas Instruments Corporation. His experience in these organizations has contributed to his expertise in the field and the development of his innovative patents.

Collaborations

Parker has collaborated with notable professionals in the industry, including Sandeep Raj Bahl and Constantin Bulucea. These collaborations have likely enriched his work and led to further advancements in semiconductor technology.

Conclusion

D Courtney Parker's innovative work in field-effect transistors showcases his significant contributions to the semiconductor industry. His patents reflect a deep understanding of the complexities involved in transistor technology, making him a key figure in this field.

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