The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2010
Filed:
Feb. 06, 2007
Constantin Bulucea, Milpitas, CA (US);
Fu-cheng Wang, San Jose, CA (US);
Prasad Chaparala, Sunnyvale, CA (US);
Constantin Bulucea, Milpitas, CA (US);
Fu-Cheng Wang, San Jose, CA (US);
Prasad Chaparala, Sunnyvale, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
Fabrication of complementary first and second insulated-gate field-effect transistors (orandor) from a semiconductor body entails separately introducing (i) three body-material dopants into the body material () for the first transistor so as to reach respective maximum dopant concentrations at three different locations in the first transistor's body material and (ii) two body-material dopants into the body material () for the second transistor so as to reach respective maximum dopant concentrations at two different locations in the second transistor's body material. Gate electrodes (orandor) are subsequently defined after which source/drain zones (orandor) are formed in the semiconductor body. The vertical dopant profiles resulting from the body-material dopants alleviate punchthrough and reduce current leakage.