The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2010
Filed:
Dec. 10, 2007
Douglas Brisbin, San Jose, CA (US);
Prasad Chaparala, Sunnyvale, CA (US);
Denis Finbarr O'connell, Palo Alto, CA (US);
Heather Mcculloh, Kennebunk, ME (US);
Sergei Drizlikh, Scarborough, ME (US);
Douglas Brisbin, San Jose, CA (US);
Prasad Chaparala, Sunnyvale, CA (US);
Denis Finbarr O'Connell, Palo Alto, CA (US);
Heather McCulloh, Kennebunk, ME (US);
Sergei Drizlikh, Scarborough, ME (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
A MOS transistor is formed with a dual-layer silicon oxynitride (SiON) etch stop film that protects the transistor from plasma induced damage (PID) and hot carrier degradation, thereby improving the reliability of the transistors. The first SiON layer is formed with SiHat a first flow rate, and the second SiON layer is formed with SiHat a second higher flow rate.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile