The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2006
Filed:
Aug. 18, 2004
Chih Sieh Teng, San Jose, CA (US);
Constantin Bulucea, Milpitas, CA (US);
Chin-miin Shyu, San Jose, CA (US);
Fu-cheng Wang, San Jose, CA (US);
Prasad Chaparala, Sunnyvale, CA (US);
Chih Sieh Teng, San Jose, CA (US);
Constantin Bulucea, Milpitas, CA (US);
Chin-Miin Shyu, San Jose, CA (US);
Fu-Cheng Wang, San Jose, CA (US);
Prasad Chaparala, Sunnyvale, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
The source/drain zones (andorand) of a p-channel IGFET (or) are provided with graded-junction characteristics to reduce junction capacitance, thereby increasing switching speed. Each source/drain zone contains a main portion (M,M,M, orM) and a more lightly doped lower portion (L,L,L, orL) underlying, and vertically continuous with, the main portion.