Semiconductor structure in which like-polarity insulated-gate field-effect transistors have multiple vertical body dopant concentration maxima and different halo pocket characteristics

Abstract

Each of a pair of differently configured like-polarity insulated-gate field-effect transistors (orandor) in a semiconductor structure has a channel zone of semiconductor body material, a gate dielectric layer overlying the channel zone, and a gate electrode overlying the gate dielectric layer. For each transistor, the net dopant concentration of the body material reaches multiple local subsurface maxima below a channel surface depletion region and below largely all gate-electrode material overlying the channel zone. The transistors have source/drain zones (or) of opposite conductivity type to, and halo pocket portions of the same conductivity type as, the body material. One pocket portion (or) extends along both source/drain zones of one of the transistors. Another pocket portion (or) extends largely along only one of the source/drain zones of the other transistor so that it is asymmetrical.