The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Oct. 17, 2007
Constantin Bulucea, Milpitas, CA (US);
Fu-cheng Wang, San Jose, CA (US);
Prasad Chaparala, Sunnyvale, CA (US);
Constantin Bulucea, Milpitas, CA (US);
Fu-Cheng Wang, San Jose, CA (US);
Prasad Chaparala, Sunnyvale, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
Each of a pair of like-polarity IGFETs (orandor) has a channel zone (or) situated in body material (). Short-channel effects are alleviated by arranging for the net dopant concentration in the channel zone to longitudinally reach a local surface minimum at a location between the IGFET's source/drain zones (andorand) and by arranging for the net dopant concentration in the body material to reach a local subsurface maximum more than 0.1 μm deep into the body material but not more than 0.4 μm deep into the body material. A pocket portion (or) extends along both source drain zones of one of the IGFETs. A pocket portion (or) extends largely along only one of the source/drain zones of the other IGFET so that it is an asymmetrical device.