IDiyas

For the Inventor, By the Inventor

Hillsboro, OR, United States of America

Neville L Dias

USPTO Granted Patents = 17 

 

Average Co-Inventor Count = 6.9

ph-index = 2

Forward Citations = 11(Granted Patents)


Company Filing History:

goldMedal17 out of 54,664 
 
Intel Corporation
 patents

Years Active: 2018-2024

Loading Chart...
Loading Chart...
17 patents (USPTO):Explore Patents
1. 11967615 - Dual threshold voltage (VT) channel devices and their methods of fabrication (2024-04-23),
2. 11121040 - Multi voltage threshold transistors through process and design-induced multiple work functions (2021-09-14),
3. 11075286 - Hybrid finfet structure with bulk source/drain regions (2021-07-27),
4. 10964690 - Resistor between gates in self-aligned gate edge architecture (2021-03-30),
5. 10930729 - Fin-based thin film resistor (2021-02-23),
6. 10854757 - FINFET based junctionless wrap around structure (2020-12-01),
7. 10854607 - Isolation well doping with solid-state diffusion sources for finFET architectures (2020-12-01),
8. 10811751 - Monolithic splitter using re-entrant poly silicon waveguides (2020-10-20),
9. 10763209 - MOS antifuse with void-accelerated breakdown (2020-09-01),
10. 10761264 - Transmission lines using bending fins from local stress (2020-09-01),
11. 10756210 - Depletion mode gate in ultrathin FINFET based architecture (2020-08-25),
12. 10643999 - Doping with solid-state diffusion sources for finFET architectures (2020-05-05),
13. 10340273 - Doping with solid-state diffusion sources for finFET architectures (2019-07-02),
14. 10192969 - Transistor gate metal with laterally graduated work function (2019-01-29),
15. 10164115 - Non-linear fin-based devices (2018-12-25),

Title: Innovator Spotlight: Neville L Dias

Introduction

Neville L Dias is an accomplished inventor based in Hillsboro, OR, USA, with a remarkable portfolio of 17 patents to his name. His work primarily focuses on advancements in semiconductor technology, showcasing his ability to innovate in this complex field.

Latest Patents

Among his latest contributions to the field are two notable patents:

1. **Dual threshold voltage (VT) channel devices and their methods of fabrication** - This invention involves a semiconductor device that incorporates a gate stack on a substrate, with source and drain regions on either side of the gate electrode. The channel region sits below the gate stack. Notably, the source region is placed in a deeper recess compared to the shallower drain region, with differing lattice constants for the semiconductor materials.

2. **Multi voltage threshold transistors through process and design-induced multiple work functions** - This apparatus features transistors placed across two different areas of a substrate, with unique work function materials applied to each area. The innovative method involves careful deposition and masking techniques to ensure that the properties of the transistors differ based on their placement.

Career Highlights

Neville has made significant advancements in his current role at Intel Corporation, where he has contributed to key projects within the semiconductor sector. His expertise and dedication have been instrumental in developing technologies that enhance the performance and efficiency of electronic devices.

Collaborations

Throughout his career, Neville has worked alongside talented colleagues such as Chia-Hong Jan and Hsu-Yu Chang. Their collaboration has fostered a creative environment conducive to innovation and the successful development of groundbreaking technologies.

Conclusion

Neville L Dias represents the spirit of innovation in the field of semiconductor technology. His 17 patents highlight not only his expertise but also his commitment to advancing the industry. As he continues to push the boundaries of technology at Intel Corporation, the future holds great promise for further innovations from this remarkable inventor.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…