The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Sep. 30, 2016
Intel Corporation, Santa Clara, CA (US);
Chia-Hong Jan, Portland, OR (US);
Walid M. Hafez, Portland, OR (US);
Hsu-Yu Chang, Hillsboro, OR (US);
Neville L. Dias, Hillsboro, OR (US);
Rahul Ramaswamy, Portland, OR (US);
Roman W. Olac-Vaw, Hillsboro, OR (US);
Chen-Guan Lee, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A transistor device including a transistor including a body disposed on a substrate, a gate stack contacting at least two adjacent sides of the body and a source and a drain on opposing sides of the gate stack and a channel defined in the body between the source and the drain, wherein a conductivity of the channel is similar to a conductivity of the source and the drain. An input/output (IO) circuit including a driver circuit coupled to the logic circuit, the driver circuit including at least one transistor device is described. A method including forming a channel of a transistor device on a substrate including an electrical conductivity; forming a source and a drain on opposite sides of the channel, wherein the source and the drain include the same electrical conductivity as the channel; and forming a gate stack on the channel.