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For the Inventor, By the Inventor

Hillsboro, OR, United States of America

Roman W Olac-Vaw

This inventor holds 22 USPTO granted patents and 2 published patent applications and 6 EPO patents, primarily in Semiconductor Devices. Top assignee: Intel Corporation. Active years: 2018-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Roman W Olac-Vaw. Retrieved from https://idiyas.com/inventor/roman-w-olac-vaw

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 22 

% Patents Active = 86.4

 

Average Co-Inventor Count = 5.3

ph-index = 3

Forward Citations = 26(Granted Patents)


Company Filing History:

goldMedal22 out of 56,365 
 
Intel Corporation
 patents

Years Active: 2018-2025

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Areas of Expertise:
Non-Planar I/O
FinFET Structures
Dual Threshold Voltage
Self-Aligned Gate Edge
Precision Resistor
Ultra-Scaled Fin Pitch
Metal Resistor
MOS Antifuse
Multi-Gate Transistor
Hybrid FinFET
Transmission Lines
Depletion Mode Gate
22 patents (USPTO):Explore Patents
1. 12191207 - Non-planar I/O and logic semiconductor devices having different workfunction on common substrate (2025-01-07),
2. 11967615 - Dual threshold voltage (VT) channel devices and their methods of fabrication (2024-04-23),
3. 11823954 - Non-planar I/O and logic semiconductor devices having different workfunction on common substrate (2023-11-21),
4. 11562999 - Cost effective precision resistor using blocked DEPOP method in self-aligned gate endcap (SAGE) architecture (2023-01-24),
5. 11335601 - Non-planar I/O and logic semiconductor devices having different workfunction on common substrate (2022-05-17),
6. 11075286 - Hybrid finfet structure with bulk source/drain regions (2021-07-27),
7. 10964690 - Resistor between gates in self-aligned gate edge architecture (2021-03-30),
8. 10950606 - Dual fin endcap for self-aligned gate edge (SAGE) architectures (2021-03-16),
9. 10930729 - Fin-based thin film resistor (2021-02-23),
10. 10892261 - Metal resistor and self-aligned gate edge (SAGE) architecture having a metal resistor (2021-01-12),
11. 10892192 - Non-planar I/O and logic semiconductor devices having different workfunction on common substrate (2021-01-12),
12. 10854757 - FINFET based junctionless wrap around structure (2020-12-01),
13. 10811751 - Monolithic splitter using re-entrant poly silicon waveguides (2020-10-20),
14. 10784378 - Ultra-scaled fin pitch having dual gate dielectrics (2020-09-22),
15. 10763209 - MOS antifuse with void-accelerated breakdown (2020-09-01),

Title: Roman W Olac-Vaw: A Pioneer in Semiconductor Innovations

Introduction

Roman W Olac-Vaw, based in Hillsboro, Oregon, has made significant contributions to the field of semiconductors with a remarkable portfolio of 22 patents. His work is primarily focused on advancing semiconductor device technology, which plays a crucial role in modern electronics.

Latest Patents

Olac-Vaw's latest patents include groundbreaking innovations in non-planar I/O and logic semiconductor devices. These patents detail the design and fabrication of semiconductor structures where devices with different workfunctions coexist on a common substrate. For instance, one of his notable inventions presents a semiconductor structure featuring two devices above a substrate, each with distinct gate electrode workfunctions. This advancement enables enhanced functionality and performance in semiconductor applications. Additionally, he has developed dual threshold voltage channel devices, showcasing a unique construction where varying recess depths are utilized for source and drain regions, ultimately improving the efficiency and versatility of semiconductor devices.

Career Highlights

Roman W Olac-Vaw's career is highlighted by his tenure at Intel Corporation, where he has been instrumental in advancing semiconductor research and development. His extensive knowledge in semiconductor design has positioned him as a key figure in the industry. Over the years, his innovations have pushed the boundaries of what is possible in semiconductor technology, earning him recognition among peers and industry leaders alike.

Collaborations

Throughout his career, Olac-Vaw has collaborated with notable colleagues such as Chia-Hong Jan and Walid M Hafez. These collaborations have led to synergistic innovations that enhance the functionality of semiconductor devices. Working alongside other esteemed professionals underlines the collaborative spirit within the research community at Intel, fostering an environment where groundbreaking ideas can flourish.

Conclusion

Roman W Olac-Vaw stands out as a pioneering inventor in the semiconductor field, with a significant number of patents that demonstrate his innovative spirit and technical expertise. His continued efforts at Intel Corporation underscore his commitment to advancing technology and shaping the future of the semiconductor industry. His work not only contributes to immediate technological advancements but also lays foundational principles for future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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