The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2021
Filed:
Oct. 21, 2016
Intel Corporation, Santa Clara, CA (US);
Chia-Hong Jan, Portland, OR (US);
Walid M. Hafez, Portland, OR (US);
Neville L. Dias, Hillsboro, OR (US);
Rahul Ramaswamy, Portland, OR (US);
Hsu-Yu Chang, Hillsboro, OR (US);
Roman W. Olac-Vaw, Hillsboro, OR (US);
Chen-Guan Lee, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Fin-based thin film resistors, and methods of fabricating fin-based thin film resistors, are described. In an example, an integrated circuit structure includes a fin protruding through a trench isolation region above a substrate. The fin includes a semiconductor material and has a top surface, a first end, a second end, and a pair of sidewalls between the first end and the second end. An isolation layer is conformal with the top surface, the first end, the second end, and the pair of sidewalls of the fin. A resistor layer is conformal with the isolation layer conformal with the top surface, the first end, the second end, and the pair of sidewalls of the fin. A first anode cathode electrode is electrically connected to the resistor layer. A second anode or cathode electrode is electrically connected to the resistor layer.