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Hsin Chu, Taiwan

Ming-Tzong Yang

USPTO Granted Patents = 61

Average Co-Inventor Count = 1.6

ph-index = 17

Forward Citations = 927(Granted Patents)

Forward Citations (Not Self Cited) = 922(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Hsin, Chu, TW (1994)
Hsin, TW (1995)
Both of Hsin-Chu, TW (1996)
Hsinchu City, TW (1999)
Hsinchu, TW (1993 - 2007)

Company Filing History:

60 out of 7,087

United Microelectronics Corp.

United Silicon Incorporated

Years Active: 1993-2007

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Areas of Expertise:

Flash Memory

Shallow Trench Isolation

Interconnection Metallization

Buried Diffusion Junction

Multilayer ONO Structure

Neuron MOSFET

Bipolar ROM Device

Static Random Access Memory

Quantum Chromeless Lithography

NAND Flash Memory

Semiconductor Device Isolation

Stacked Capacitor Fabrication

61 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7169668 - Method of manufacturing a split-gate flash memory device (2007-01-30),

2. 6258692 - Method forming shallow trench isolation (2001-07-10),

3. 6232215 - Method for forming increased density for interconnection metallization (2001-05-15),

4. 6221731 - Process of fabricating buried diffusion junction (2001-04-24),

5. 6020251 - Method of forming buried diffusion junctions in conjunction with (2000-02-01),

6. 5981404 - Multilayer ONO structure (1999-11-09),

7. 5902752 - Active layer mask with dummy pattern (1999-05-11),

8. 5895945 - Single polysilicon neuron MOSFET (1999-04-20),

9. 5798298 - Method of automatically generating dummy metals for multilevel (1998-08-25),

10. 5757083 - Drain off-set for pull down transistor for low leakage SRAM's (1998-05-26),

11. 5716884 - Process for fabricating a stacked capacitor (1998-02-10),

12. 5712500 - Multiple cell with common bit line contact and method of manufacture (1998-01-27),

13. 5698458 - Multiple well device and process of manufacture (1997-12-16),

14. 5698349 - Sub-resolution phase shift mask (1997-12-16),

15. 5661047 - Method for forming bipolar ROM device (1997-08-26),

Title: Inventor Ming-Tzong Yang

Introduction: Ming-Tzong Yang is a renowned inventor based in Hsin Chu, Taiwan, known for his groundbreaking contributions to various technological fields.

Latest Patents: Ming-Tzong Yang holds several patents in the areas of semiconductor technology, renewable energy, and telecommunications, showcasing his innovative spirit and expertise.

Career Highlights: With a career spanning over two decades, Ming-Tzong Yang has worked with leading research institutions and technology companies, playing a key role in developing cutting-edge solutions that have revolutionized industries.

Collaborations: Throughout his career, Ming-Tzong Yang has collaborated with top engineers, scientists, and researchers globally, fostering a culture of innovation and excellence in all his projects.

Conclusion: Ming-Tzong Yang's dedication to pushing the boundaries of technology and his passion for innovation continue to inspire the next generation of inventors and researchers worldwide.

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