The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 1998
Filed:
Oct. 09, 1996
Applicant:
Inventor:
Ming-Tzong Yang, Hsin Chu, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257903 ; 257904 ;
Abstract
The pull down transistor of a static SRAM semiconductor device is formed with oxide and polysilicon regions formed on a doped silicon substrate. A masking area is formed over the drain side of the polysilicon and the areas of the drain region proximal to the gate in the silicon and oxide layers below. N+ dopant is implanted into the unmasked areas of said substrate about the polysilicon region with the drain doping offset by the resist overlying the proximal portion of the drain region. A spacer is formed by chemical vapor deposition about the polysilicon region. Next an N- implantation follows with the offset provided by the spacers about the polysilicon region.