The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2007
Filed:
Jan. 09, 2005
Applicants:
Ming-tzong Yang, Hsin-Chu, TW;
Tzu-ping Chen, Hsin-Chu, TW;
Inventors:
Ming-Tzong Yang, Hsin-Chu, TW;
Tzu-Ping Chen, Hsin-Chu, TW;
Assignee:
United Microelectronics Corp., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a split-gate flash memory device is disclosed. On a semiconductor substrate having a plurality of parallel conductive lines, a plurality of doped regions are formed by an ion implantation using the conductive lines as mask. Then, the conductive lines are trimmed for thinning the cover area. Afterward, a composite dielectric layer is formed on the substrate and covers the conductive lines. Finally, a plurality of word lines are formed on the composite dielectric layer.