The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 2001
Filed:
Apr. 20, 1998
Applicant:
Inventors:
Nai-Chen Peng, Hsinchu, TW;
Ming-Tzong Yang, Hsinchu, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract
A process is disclosed for fabricating buried diffusion junction that can be combined with the shallow-trench isolation for the memory device cell unit transistor wherein both the junction and the isolation can be formed in the same layout. The buried diffusion is free from being inadvertently cut apart to cause open-circuiting. A bird's beak oxide layer is formed protecting the buried diffusion junction region from undesirable etching, thereby preventing from damaging consumption by etching. The buried diffusion junctions formed may serve as the source/drain region for the transistor.