Hsin-Chu, Taiwan

Nai-Chen Peng


Average Co-Inventor Count = 2.0

ph-index = 5

Forward Citations = 147(Granted Patents)


Company Filing History:


Years Active: 2000-2009

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10 patents (USPTO):Explore Patents

Title: Nai-Chen Peng: Innovator in Non-Volatile Memory Technologies

Introduction

Nai-Chen Peng is a prominent inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of non-volatile memory technologies, holding a total of 10 patents. His work has been instrumental in advancing memory storage solutions that are crucial for modern electronic devices.

Latest Patents

Among his latest patents, Nai-Chen Peng has developed a NAND-type non-volatile memory. This innovative memory includes a substrate, a plurality of data storage elements positioned on the substrate, and a plurality of control gates positioned above the data storage elements. Another notable invention is the single-poly EEPROM, which features a first PMOS transistor serially connected to a second PMOS transistor. The design of this EEPROM includes a floating gate, a first P-doped drain region, and a first P-doped source region, all formed on an N-well of a P-type substrate. The overlapping regions in this design serve as critical components for its functionality.

Career Highlights

Nai-Chen Peng has worked with several notable companies throughout his career, including United Microelectronics Corporation and United Silicon Incorporated. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in memory technology.

Collaborations

Throughout his career, Nai-Chen Peng has collaborated with esteemed colleagues such as Tzyh-Cheang Lee and Ching-Hung Cheng. These partnerships have fostered an environment of innovation and creativity, leading to the development of cutting-edge technologies.

Conclusion

Nai-Chen Peng's contributions to the field of non-volatile memory technologies have established him as a key figure in the industry. His innovative patents and collaborations continue to influence the future of memory storage solutions.

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