The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2005
Filed:
Feb. 24, 2003
Ming-yin Hao, Taichung, TW;
Tri-rung Yew, Hsinchu, TW;
Coming Chen, Hsinchu, TW;
Tsong-minn Hsieh, Miaoli, TW;
Nai-chen Peng, Hsinchu, TW;
Jih-cheng Yeh, Hsinchu Hsien, TW;
Ming-Yin Hao, Taichung, TW;
Tri-Rung Yew, Hsinchu, TW;
Coming Chen, Hsinchu, TW;
Tsong-Minn Hsieh, Miaoli, TW;
Nai-Chen Peng, Hsinchu, TW;
Jih-Cheng Yeh, Hsinchu Hsien, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A fabrication method for an integrated device having a capacitor in an interconnect system is described. At least a first exposed metal line and a second metal line are provided in an insulating layer. A stack layer is deposited and patterned to form a film stack structure over the second metal line. An inter-metal dielectric layer is formed over the film stack structure, the first metal line and the insulating layer. At least a first dual damascene interconnect and a second dual damascene interconnect are formed over and in contact with the first metal line and the film stack structure, respectively.