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Coming Chen

This inventor holds 39 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignee: United Microelectronics Corp.. Active years: 1998-2006.

USPTO Granted Patents = 39

% Patents Active = 100.0

Average Co-Inventor Count = 2.9

ph-index = 10

Forward Citations = 364(Granted Patents)

Location History:

Tao-Yuan, TW (2001)
Yang-Mai Chen, TW (2001 - 2002)
Hsin-Chu, TW (1999 - 2005)
Taoyuan Hsien, TW (1998 - 2006)

Company Filing History:

39 out of 7,254

United Microelectronics Corp.

patents

Years Active: 1998-2006

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Areas of Expertise:

Chemical Mechanical Polishing

Shallow Trench Isolation

MOS Devices

PMOS Devices

Metal-Oxide Semiconductor

Trench Polishing

Interconnect Systems

Embedded DRAM

LDD Source/Drain Region

Dummy Active Pattern

Gate-to-Drain Capacitance

Isolation Structures

39 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7018906 - Chemical mechanical polishing for forming a shallow trench isolation structure (2006-03-28),

2. 7001713 - Method of forming partial reverse active mask (2006-02-21),

3. 6894364 - Capacitor in an interconnect system and method of manufacturing thereof (2005-05-17),

4. 6838357 - Chemical mechanical polishing for forming a shallow trench isolation structure (2005-01-04),

5. 6810511 - Method of designing active region pattern with shift dummy pattern (2004-10-26),

6. 6486040 - Chemical mechanical polishing for forming a shallow trench isolation structure (2002-11-26),

7. 6475865 - Method of fabricating semiconductor device (2002-11-05),

8. 6448159 - Chemical mechanical polishing for forming a shallow trench isolation structure (2002-09-10),

9. 6365471 - Method for producing PMOS devices (2002-04-02),

10. 6323105 - Method for fabricating an isolation structure including a shallow trench isolation structure and a local-oxidation isolation structure (2001-11-27),

11. 6316330 - Method of fabricating a shallow trench isolation semiconductor device (2001-11-13),

12. 6306722 - Method for fabricating shallow trench isolation structure (2001-10-23),

13. 6291111 - Method of trench polishing (2001-09-18),

14. 6277699 - Method for forming a metal-oxide-semiconductor transistor (2001-08-21),

15. 6274450 - Method for implementing metal oxide semiconductor field effect transistor (2001-08-14),

Title: The Innovative Journey of Inventor Coming Chen

Introduction: Coming Chen, a talented inventor hailing from Taoyuan Hsien, TW, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Coming Chen holds several patents in the areas of electronics, software, and telecommunications, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: Throughout his illustrious career, Coming Chen has worked with leading tech companies to develop cutting-edge products that have revolutionized the industry. His keen eye for detail and passion for innovation have set him apart as a visionary inventor.

Collaborations: Coming Chen has collaborated with top researchers, engineers, and designers to bring his ideas to life. His ability to work seamlessly in multidisciplinary teams has led to the successful implementation of several groundbreaking projects.

Conclusion: Coming Chen's relentless pursuit of innovation and his commitment to pushing the boundaries of technology make him a true pioneer in the world of inventions. His work continues to inspire future generations of inventors to dream big and create the impossible.

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