The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2001
Filed:
May. 03, 1999
Applicant:
Inventors:
Gwo-Shii Yang, Hsinchu, TW;
Tri-Rung Yew, Hsinchu Hsien, TW;
Coming Chen, Taoyuan Hsien, TW;
Water Lur, Taipei, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ; H01L 2/131 ; H01L 2/1469 ;
U.S. Cl.
CPC ...
H01L 2/176 ; H01L 2/131 ; H01L 2/1469 ;
Abstract
A method for fabricating, a shallow trench isolation structure. A pad oxide layer and a silicon nitride layer are formed in sequence on a substrate. A trench is formed in the substrate and a liner oxide layer is formed on a sidewall of the trench. A doped silicon dioxide layer is formed on the silicon nitride layer and fills the trench. An annealing process is performed to density the doped silicon dioxide layer. A portion of the doped silicon dioxide layer is removed to expose the silicon nitride layer by a planarization process.