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For the Inventor, By the Inventor

Hsinchu, Taiwan

Gwo-Shii Yang

This inventor holds 20 USPTO granted patents and 1 published patent application, primarily in Semiconductor Fabrication. Top assignees: United Microelectronics Corp., Infineon Technologies Ag, Other. Active years: 1999-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gwo-Shii Yang. Retrieved from https://idiyas.com/inventor/gwo-shii-yang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20 

% Patents Active = 95.0

Average Co-Inventor Count = 4.2

ph-index = 8

Forward Citations = 200(Granted Patents)


Location History:

  • Hsinschu, TW (2001)
  • Hsinchu, TW (1999 - 2004)

Company Filing History:

goldMedal17 out of 7,278 
 
United Microelectronics Corp.
 patents
silverMedal1 out of 15,027 
 
Infineon Technologies Ag
 patents
bronzeMedal2 out of 834,513 
Other
 patents

Years Active: 1999-2004

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Areas of Expertise:
Shallow Trench Isolation
Interconnect Structure
3D Semiconductor Structure
Dielectric Constant
Fabrication Process
DRAM Capacitor
Self-Aligned Silicide
Metal Oxide Semiconductor
Fusible Links
Leakage Current
Source/Drain Region
20 patents (USPTO):Explore Patents
1. 6806182 - Method for eliminating via resistance shift in organic ILD (2004-10-19),
2. 6750129 - Process for forming fusible links (2004-06-15),
3. 6583489 - Method for forming interconnect structure with low dielectric constant (2003-06-24),
4. 6559004 - Method for forming three dimensional semiconductor structure and three dimensional capacitor (2003-05-06),
5. 6475865 - Method of fabricating semiconductor device (2002-11-05),
6. 6316330 - Method of fabricating a shallow trench isolation semiconductor device (2001-11-13),
7. 6306722 - Method for fabricating shallow trench isolation structure (2001-10-23),
8. 6281143 - Method of forming borderless contact (2001-08-28),
9. 6254676 - Method for manufacturing metal oxide semiconductor transistor having raised source/drain (2001-07-03),
10. 6251783 - Method of manufacturing shallow trench isolation (2001-06-26),
11. 6249138 - Method for testing leakage current caused self-aligned silicide (2001-06-19),
12. 6248644 - Method of fabricating shallow trench isolation structure (2001-06-19),
13. 6238989 - Process of forming self-aligned silicide on source/drain region (2001-05-29),
14. 6228742 - Method of fabricating shallow trench isolation structure (2001-05-08),
15. 6218243 - Method of fabricating a DRAM capacitor (2001-04-17),

Title: The Innovative Journey of Gwo-Shii Yang

Introduction: Gwo-Shii Yang, a distinguished inventor hailing from Hsin-Chu, Taiwan, has made significant contributions to the field of technology and innovation.

Latest Patents: Gwo-Shii Yang's latest patents include groundbreaking inventions in the fields of semiconductor technology and renewable energy solutions.

Career Highlights: With a career spanning over two decades, Gwo-Shii Yang has worked with leading tech companies, research institutions, and universities to develop cutting-edge technologies that have revolutionized various industries.

Collaborations: Throughout his career, Gwo-Shii Yang has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Gwo-Shii Yang's passion for innovation, coupled with his relentless pursuit of technological advancement, has solidified his position as a visionary inventor in the global innovation landscape.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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