The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2001
Filed:
Jun. 17, 1999
Applicant:
Inventors:
Michael W C Huang, Hsin-Tien, TW;
Hsueh-Hao Shih, Hsin-Chu, TW;
Gwo-Shii Yang, Hsin-Chu, TW;
Tri-Rung Yew, Chu-Tung Chen, TW;
Assignee:
United Microelectronics Corp., Hsin-Chu City, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ; H01L 2/1425 ; H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/131 ; H01L 2/1469 ; H01L 2/1425 ; H01L 2/144 ;
Abstract
A method for forming borderless contact is disclosed. The method includes providing a substrate with active areas and a trench isolation region in which the active areas are silcide. Then, the substrate is nitridized such that a titanium nitride layer is formed on the active areas and a silicon oxynitride is formed on the trench isolation region. A dielectric layer is deposited on the substrate and an opening is etched in the dielectric layer in which the opening overlies both a portion of the trench isolation region and a portion of the active area.