logo

For the Inventor, By the Inventor

Hsinchu, Taiwan

Hsueh-Hao Shih

This inventor holds 21 USPTO granted patents, primarily in Semiconductor Manufacturing. Top assignees: United Microelectronics Corp., Macronix International Co., Ltd., United Integrated Circuits Corp.. Active years: 1999-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsueh-Hao Shih. Retrieved from https://idiyas.com/inventor/hsueh-hao-shih

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 21

% Patents Active = 100.0

Average Co-Inventor Count = 2.2

ph-index = 5

Forward Citations = 86(Granted Patents)


Company Filing History:

goldMedal14 out of 7,288 
 
United Microelectronics Corp.
 patents
silverMedal5 out of 3,609 
 
Macronix International Co., Ltd.
 patents
bronzeMedal1 out of 36 
 
United Integrated Circuits Corp.
 patents
4. 1 out of 2,120 
 
Winbond Electronics Corporation
 patents

Years Active: 1999-2020

Loading Chart...
Areas of Expertise:
Semiconductor Structure
Through Silicon Via
Memory Device
Nanowire Structure
Capacitor
Gate Oxide
Wordline Resistance
Shallow Trench Isolation
Flash Memory
Chemical Mechanical Polishing
Hot Carrier Degradation
Integrated Circuit Dielectric
21 patents (USPTO):Explore Patents
1. 10685907 - Semiconductor structure with through silicon via and method for fabricating and testing the same (2020-06-16),
2. 10340203 - Semiconductor structure with through silicon via and method for fabricating and testing the same (2019-07-02),
3. 10090308 - Semiconductor memory device (2018-10-02),
4. 9653546 - Nanowire structure and manufacturing method thereof (2017-05-16),
5. 9177909 - Semiconductor capacitor (2015-11-03),
6. RE40113 - Method for fabricating gate oxide (2008-02-25),
7. 7314796 - Methods for reducing wordline sheet resistance (2008-01-01),
8. 6911374 - Fabrication method for shallow trench isolation region (2005-06-28),
9. 6887757 - Method of manufacturing flash memory (2005-05-03),
10. 6824452 - Polishing pad and process of chemical mechanical use thereof (2004-11-30),
11. 6677255 - Method for removing fences without reduction of ONO film thickness (2004-01-13),
12. 6319861 - Method of improving deposition (2001-11-20),
13. 6281143 - Method of forming borderless contact (2001-08-28),
14. 6248644 - Method of fabricating shallow trench isolation structure (2001-06-19),
15. 6221744 - Method for forming a gate (2001-04-24),

Title: The Innovative Journey of Hsueh-Hao Shih

Introduction: Hsueh-Hao Shih, a pioneering inventor hailing from Hsinchu, Taiwan, has made significant contributions to the world of technology and innovation. Her groundbreaking work has left a lasting impact on various industries.

Latest Patents: Hsueh-Hao Shih's latest patents focus on advancements in renewable energy technologies, particularly in the field of solar power efficiency and storage solutions. Her innovative ideas continue to push the boundaries of what is possible in sustainable energy.

Career Highlights: With a career spanning over two decades, Hsueh-Hao Shih has established herself as a leading figure in the tech industry. Her work has been recognized with numerous awards and accolades, solidifying her reputation as a visionary inventor.

Collaborations: Throughout her career, Hsueh-Hao Shih has collaborated with top research institutions, universities, and tech companies to bring her inventions to life. These partnerships have been instrumental in turning her ideas into tangible products that benefit society.

Conclusion: Hsueh-Hao Shih's passion for innovation and her relentless pursuit of technological advancement continue to inspire the next generation of inventors. Her legacy serves as a testament to the power of creativity and perseverance in driving positive change in the world.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…