The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2008
Filed:
Dec. 17, 2004
Hung-wei Liu, Hsinchu, TW;
Hsueh-hao Shih, Hsinchu, TW;
Szu-yu Wang, Hsinchu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
The present invention is directed to forming memory wordlines having a relatively lower sheet resistance. In one embodiment, a control-gate poly layer including a first and a second poly-Si portion is deposited. a The first poly-Si portion is deposited on a semiconductor substrate using a first precursor gas flow rate. A The second poly-Si portion is deposited on the first poly-Si portion using a second precursor gas flow rate, where the second precursor flow rate higher than the first precursor gas flow rate. A tungsten silicide layer is then deposited. A wordline is formed from a stacked film of the control-gate poly layer and tungsten silicide layer. The control-gate poly layer and tungsten silicide layer are then patterned to form a gate electrode, and a implantation process is made, after or before, forming the tungsten silicide layer.