The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2017
Filed:
Apr. 16, 2015
United Microelectronics Corp., Hsin-Chu, TW;
Hsueh-Hao Shih, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A manufacturing method of a nanowire structure includes the following steps. A fin and a shallow trench isolation (STI) are formed on a substrate. A first patterned insulation layer is formed on an exposed upper part of the fin. The STI is then recessed for exposing a lower part of the fin. A second patterned insulation layer is formed in second regions for covering the first patterned insulation layer and the exposed part of the fin. The lower part of the fin is then removed for forming an upper fin and a lower fin in a first region. The STI is further recessed for exposing a portion of the lower fin and a portion of the fin in the second regions. The first patterned insulation layer on the first region is removed, and the upper fin is converted into a first nanowire.