Michael W C Huang

Title: Michael W C Huang: Innovator in Plasma Etching and Silicide Processes

Introduction

Michael W C Huang is a prominent inventor based in Taipei Hsien, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of eight patents. His innovative work primarily focuses on methods for high-density plasma etching and self-aligned silicide processes.

Latest Patents

Among his latest patents is a method for high-density plasma etching. This method involves providing a substrate on which a material layer is formed. A patterned photo-resist layer is then created on the oxide layer. The material layer is patterned through high-density plasma etching, while simultaneously suppressing the formation of a barrier layer over the substrate during the patterning process. Additionally, the nitrogen gas generated in the patterned photo-resist layer is reduced. Another notable patent is the self-aligned silicide process. In this process, a substrate with at least one transistor is utilized. A thin metal layer is formed over the substrate, followed by a rapid thermal process that allows the metal layer to react with polysilicon in the gate and source/drain regions, forming a first metal silicide layer. The non-reactive metal layer is then removed, and a selective raised salicide process is performed to create a second metal silicide layer on the first. A second rapid thermal process transforms both metal silicide layers from a high-resistance phase into a low-resistance phase.

Career Highlights

Michael W C Huang is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work has significantly advanced the understanding and application of plasma etching and silicide processes in semiconductor manufacturing.

Collaborations

Throughout his career, Huang has collaborated with notable colleagues, including Tri-Rung Yew and Kuo-Tai Huang. These collaborations have further enriched his research and development efforts in the field.

Conclusion

Michael W C Huang is a distinguished inventor whose contributions to plasma etching and silicide processes have had a lasting impact on semiconductor technology. His innovative patents and collaborations continue to shape the future of the industry.