The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2001
Filed:
Nov. 30, 1999
Applicant:
Inventors:
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract
A self-aligned silicide process. A substrate has at least a transistor formed thereon. A thin metal layer is formed over the substrate. A first rapid thermal process is performed to make the metal layer react with polysilicon of the gate and of the source/drain regions to form a first metal silicide layer. The metal layer, which does not react with polysilicon, is removed. A selective raised salicide process is performed to form a second metal silicide layer on the first metal silicide layer. A second rapid thermal process is performed to transform the first metal silicide layer and the second metal silicide layer from a high-resistance C,phase into a low-resistance C,phase.